O. Boultif1B. Zaidi2S. Roguai3A. Mehdaoui4F. Diab5T. Bouarroudj6K. Kamli7Z. Hadef8C. Shekha92024-02-142024-02-142023-04-272DOI: 10.21272/jnep.15(2).02016http://dspace.univ-khenchela.dz:4000/handle/123456789/1031/Photovoltaic conversion is a photo-electronic process that involves the interaction between a photo and an electron. The subject is to present a study on the physical principle of operation of a photovoltaic cell based on silicon. The external parameters that we have determined from a photovoltaic model are the short-circuit current (Jsc), the open-circuit voltage (Voc) and the photovoltaic conversion efficiency (K), we simulate the photovoltaic parameters by the Solar Cell Capacitance Simulator structures (SCAPS-1D) software whose mathematical model is based on solving the equations of Poisson and continuity of elec- trons and holes. We used two structures to carry out this study, the first ITO/CdS/Si and the second ZnO/Si/CdS, after having noted their current-voltage characteristic (J-V). In this paper we studied the effect of the temperature and the doping concentration on the two structures of heterojunction solar cell. The highest performance value for the ZnO/CdS/Si heterojunction solar cell was simulated as 29.3 %. The performance value for the ITO/CdS/Si structure was increased to 29.7 % with the impact of the ITO antire- flective layerenArticle