DJELLOUL Abdelkader2024-02-132024-02-132004http://dspace.univ-khenchela.dz:4000/handle/123456789/742We have investigated the growth conditions on the electric properties of ZnO thin films. Samples were deposited on (1010) , (0001) and (1120) Al2O3 substrates by the chemical vapor transport technique. At room temperature, the carrier concentration and Hall mobility were in the range of 21016 – 8.41018 cm-3 and 140 – 160 cm2V-1s-1, respectively. Results of temperature dependent Hall mobility measurements indicate there are different transport mechanisms at high and low temperatures. Keywords: Thin films. Zinc oxide. Chemical vapor deposition. Hall Mobility