PROPRIETES ELECTRIQUES DES COUCHES MINCES D’OXYDE DE ZINC

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dc.contributor.authorA. DJELLOUL
dc.date.accessioned2024-02-16T16:03:07Z
dc.date.available2024-02-16T16:03:07Z
dc.date.issued2004-01-14
dc.description.abstractWe have investigated the growth conditions on the electric properties of ZnO thin films. Samples were deposited on (1010) , (0001) and (1120) Al2O3 substrates by the chemical vapor transport technique. At room temperature, the carrier concentration and Hall mobility were in the range of 21016 – 8.41018 cm-3 and 140 – 160 cm2V-1s-1, respectively. Results of temperature dependent Hall mobility measurements indicate there are different transport mechanisms at high and low temperatures
dc.identifier.urihttp://dspace.univ-khenchela.dz:4000/handle/123456789/1308
dc.language.isoen
dc.titlePROPRIETES ELECTRIQUES DES COUCHES MINCES D’OXYDE DE ZINC
dc.title.alternativePROPRIETES ELECTRIQUES DES COUCHES MINCES D’OXYDE DE ZINC
dc.typeArticle
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