Photoluminescence Characterization of Al/Al_2O_3/InP MIS Structures passivated by anodic oxidation ABDELHAKIM MAHDJOUB
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Date
2004-10-25
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Abstract
Metal-insulator-semiconductor (MIS) structures were produced by electron beam evaporation of
Al2O3 on InP. Polyphosphate thin films of thickness 100{150 ˚ A were used to passivate the interface
InPnInsulator. Photoluminescence spectra are reported at low temperature at various stages of the realization process of the MIS-InP structure. Photoluminescence topography at ambient temperature made
it possible to characterize the surface state after each technological stage. The interface degradation
under the effect of repeated annealing is insignificant up to temperatures of 350 ◦C. Radiative major
defects detected by photoluminescence spectrum with energy 0.95{1.15 eV attributed to the complexes
impurities of phosphorus vacancies are substantially reduced by the presence of anodic oxide.