MODELING AND SIMULATION OF THE ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF CARBON NANOTUBES (APPLICATION TO C-CNTFET AND OG-CNTFET).
| dc.contributor.author | Saad Eddine, KHEMISSI | |
| dc.date.accessioned | 2026-09-29T09:38:51Z | |
| dc.date.available | 2026-09-29T09:38:51Z | |
| dc.date.issued | 2026 | |
| dc.description.abstract | This thesis presents a comprehensive study of nano-carbon transistors based on carbon nanotubes (CNTs) and graphene nanoribbons (GNRs), focusing on their synthesis, fundamental electronic properties, and device architectures. It begins with an overview of carbon allotropes, highlighting the effects of material structure on electronic behavior. The work then reviews field-effect transistor (FET) fundamentals, progressing from conventional MOSFETs to various CNTFETs, with particular attention to optically gated CNTFETs and their potential in optoelectronic applications. Subsequently, the study explores the fabrication and operation of graphene nanoribbon FETs (GNRFETs), emphasizing their use in gas sensing. Through simulation, optical gating effects on CNTFET I–V characteristics and photocurrent generation are characterized. An applied investigation focuses on double-gated GNRFET gas sensors using LaAlO₃ gate dielectrics, analyzing sensor response to ammonia NH 3 exposure and the influence of parameters such as voltage, dielectric properties, and gas concentration on performance metrics. This research advances the understanding of nano-carbon device physics and applications for future nanoelectronic and sensing platforms. | |
| dc.identifier.uri | http://dspace.univ-khenchela.dz:4000/handle/123456789/11538 | |
| dc.language.iso | en | |
| dc.title | MODELING AND SIMULATION OF THE ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF CARBON NANOTUBES (APPLICATION TO C-CNTFET AND OG-CNTFET). | |
| dc.type | Thesis |