Enhancing Drain Current in Nano‑carbon Transistors: Simulation and Modeling with LaAlO 3 Dielectric Under NH 3 Exposure
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Date
2025-08-19
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Abstract
We have developed and analyzed an analytical model of a double-gate graphene nanoribbon ield-efect transistor (GNRFET),
which
is
subsequently
evaluated
through
numerical
simulations,
to
investigate
its
potential
as
an
ammonia
(NH
) gas
sensor. Using lanthanum aluminate (LaAlO
), known for its high dielectric constant (K = 30), serves as a gate dielectric in
the coniguration of GNRFET gas sensors to minimize short-channel efects and leakage current. The study investigates the
static characteristics of the device both in the presence and absence of ammonia gas, providing insights into its potential for
gas detection. Following the determination of the device structure, the drain current is calculated as a function of gate and
drain bias voltages. The general current equation is enhanced by incorporating expressions that account for the inluence of
NH
3
3
gas and temperature variations. These mathematical formulations are then utilized to develop a comprehensive simulation
program.
The
simulation
is
conducted
on
GNRFET
devices
with
gate
lengths
ranging
from
100 nm
to
300 nm,
and
NH
gas concentrations from 300 ppm to 500 ppm. The simulation results provide insight into how various parameters afect the
performance of GNRFETs. Our indings demonstrate that GNRFETs exhibit signiicant potential as high-quality NH
gas
sensors, highlighting their applicability in environmental monitoring and sensor technology.
3
3
3