Photoluminescence,FTIRandX-raydiffractionstudiesonundoped and Al-dopedZnOthinfilmsgrownonpolycrystalline a-alumina substrates byultrasonicspraypyrolysis
| dc.contributor.author | DJELLOUL Abdelkader | |
| dc.date.accessioned | 2024-02-13T19:05:11Z | |
| dc.date.available | 2024-02-13T19:05:11Z | |
| dc.date.issued | 2010 | |
| dc.description.abstract | Undoped and aluminum - doped zinc oxide (ZnO )thin films have been grow nonpolycrystalline a-alumin a substrates by ultra sonic spray pyrolysis (USP) technique using zinc acetate dihydrate and aluminum chloride hexahydrate (Alsource) dissolved in methanol, ethanol and deionized water. A number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, and photoluminescence (PL) were used to characterize the obtained ZnO obtained ZnO thin films. It was seen that theorientation changed with increasein substrate temperature. During the ZnO deposition Zn source reacted with polycrystalline a-Al2O3 substrate form an intermediate ZnAl2O4 spinellayer. It has been in terestingly found that thein tensityof green emissionat 2.48 eV remarkably increased when the obtained ZnO: Al films were depositedat 380 1C. The FTIR absorbance intensity of spectroscopic bandat 44776 cm 1 is very sensitive to oxygen sublattice disorder resulting fromn on-stoichiometry, which is consistent with the resultof PL characterization | |
| dc.identifier.uri | http://dspace.univ-khenchela.dz:4000/handle/123456789/739 | |
| dc.title | Photoluminescence,FTIRandX-raydiffractionstudiesonundoped and Al-dopedZnOthinfilmsgrownonpolycrystalline a-alumina substrates byultrasonicspraypyrolysis |