Air and Vacuum Annealing Effect on the Highly Conducting and Transparent Properties of the Undoped Zinc Oxide Thin Films Prepared by DC Magnetron Sputtering
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Date
2023-03-31
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Abstract
In this study, we aim to investigate the effect of zinc
interstitials (Zni) and oxygen vacancies (VO) on the ZnO electrical
conductivity. ZnO films were synthesized via DC magnetron
sputtering process using pure Zn target in gases mixture of Ar/O2 =
80/17.5 sccm. In order to improve the optical and electrical
prosperities, the obtained films were subjected to air and vacuum
annealing treatment. Several techniques such as field emission
scanning electron microscopy (FESEM), Grazing Incidence X-ray
Diffraction (GIXRD), Raman spectroscopy, photoluminescence
spectroscopy (PL) and UV-visible were used to study the influence
of heat treatment on ZnO properties. Electrical conductivity of ZnO
films was determined by measuring the sheet resistance and
thickness of the films. As deposited and under vacuum annealing
films showed a lower electrical resistivity of 2.72×10−3 and
1.17×10−2 Ωcm, respectively, due to the Zn-rich conditions. ZnO
films under air treatment show a intensity decrease of (103) plane
and an optical transmittance of 87 %.