Accurate numerical modelling the GaAs MESFET current-voltage characteristics
| dc.contributor.author | N. Merabtine | |
| dc.date.accessioned | 2024-03-21T21:08:18Z | |
| dc.date.available | 2024-03-21T21:08:18Z | |
| dc.date.issued | 2004-12-16 | |
| dc.description.abstract | In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In this frame, we elaborated a simulation software based on analysis of expressions that we have previously set up [1-3], the obtained theoretical results are discussed and compared to the experimental ones | |
| dc.identifier.uri | http://dspace.univ-khenchela.dz:4000/handle/123456789/4433 | |
| dc.language.iso | en | |
| dc.title | Accurate numerical modelling the GaAs MESFET current-voltage characteristics | |
| dc.type | Article |
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