Accurate numerical modelling the GaAs MESFET current-voltage characteristics
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Date
2004-12-16
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Abstract
In this paper, we present a computing model of the current-voltage (I-V)
characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs
MESFET. This physical model is based on the two-dimensional analysis of the Poisson
equation in the active region under the gate. In this frame, we elaborated a simulation
software based on analysis of expressions that we have previously set up [1-3], the
obtained theoretical results are discussed and compared to the experimental ones