PROPRIETES ELECTRIQUES DES COUCHES MINCES D’OXYDE DE ZINC
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Date
2004
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Abstract
We have investigated the growth conditions on the electric properties of ZnO thin films. Samples were deposited on (1010) , (0001) and (1120) Al2O3 substrates by the chemical vapor transport technique. At room temperature, the carrier concentration and Hall mobility were in the range of 21016 – 8.41018 cm-3 and 140 – 160 cm2V-1s-1, respectively. Results of temperature dependent Hall mobility measurements indicate there are different transport mechanisms at high and low temperatures.
Keywords: Thin films. Zinc oxide. Chemical vapor deposition. Hall Mobility