Structural and magnetic properties of copper oxide films deposited by DC magnetron reactive sputtering

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dc.contributor.authorL. Radjehi
dc.date.accessioned2024-02-16T15:47:18Z
dc.date.available2024-02-16T15:47:18Z
dc.date.issued2018-10-01
dc.description.abstractCopper oxide films have been successfully deposited onto glass/Si(100) substrates by DC reactive magnetron sputtering in Ar/O 2 gas mixtures, while varying oxygen flow rate. The obtained results based on the structure and magnetic properties are discussed. Depending on the oxygen flow rate, the films reveal different phases and morphologies of Cu2O, Cu4O3 and CuO. In addition, the magnetic properties of the copper oxides thin films are found to be strongly influenced by the oxygen flow rate; the ferro–para transition is influenced by the formation/cancellation of point defects.
dc.identifier.urihttp://dspace.univ-khenchela.dz:4000/handle/123456789/1303
dc.language.isoen
dc.titleStructural and magnetic properties of copper oxide films deposited by DC magnetron reactive sputtering
dc.title.alternativeStructural and magnetic properties of copper oxide films deposited by DC magnetron reactive sputtering
dc.typeArticle
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