MODELING AND SIMULATION OF THE ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF CARBON NANOTUBES (APPLICATION TO C-CNTFET AND OG-CNTFET).
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Date
2026
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Abstract
This thesis presents a comprehensive study of nano-carbon transistors based on carbon
nanotubes (CNTs) and graphene nanoribbons (GNRs), focusing on their synthesis, fundamental
electronic properties, and device architectures. It begins with an overview of carbon allotropes,
highlighting the effects of material structure on electronic behavior. The work then reviews
field-effect transistor (FET) fundamentals, progressing from conventional MOSFETs to various
CNTFETs, with particular attention to optically gated CNTFETs and their potential in
optoelectronic applications. Subsequently, the study explores the fabrication and operation of
graphene nanoribbon FETs (GNRFETs), emphasizing their use in gas sensing. Through
simulation, optical gating effects on CNTFET I–V characteristics and photocurrent generation
are characterized. An applied investigation focuses on double-gated GNRFET gas sensors using
LaAlO₃ gate dielectrics, analyzing sensor response to ammonia NH
3
exposure and the influence
of parameters such as voltage, dielectric properties, and gas concentration on performance
metrics. This research advances the understanding of nano-carbon device physics and
applications for future nanoelectronic and sensing platforms.